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Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor Noor, Fatimah Arofiati; Iskandar, Ferry; Abdullah, Mikrajuddin; khairurrijal, Khairurrijal
TELKOMNIKA Telecommunication, Computing, Electronics and Control Vol 10, No 3: September 2012
Publisher : Universitas Ahmad Dahlan

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Abstract

In this paper, we have developed a model of the tunneling currents through a high-k dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the effective oxide thickness (EOT) of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents.
Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor Noor, Fatimah Arofiati; Iskandar, Ferry; Abdullah, Mikrajuddin; khairurrijal, Khairurrijal
TELKOMNIKA Indonesian Journal of Electrical Engineering Vol 10, No 3: July 2012
Publisher : Institute of Advanced Engineering and Science

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Abstract

In this paper, we have developed a model of the tunneling currents through a high-k dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the effective oxide thickness (EOT) of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents.
A Low Cost C8051F006 SoC-Based Quasi-Static C-V Meter for Characterizing Semiconductor Devices Rahmawati, Endah; Ekawita, Riska; Budiman, Maman; Abdullah, Mikrajuddin; Khairurrijal, Khairurrijal
TELKOMNIKA Indonesian Journal of Electrical Engineering Vol 10, No 6: October 2012
Publisher : Institute of Advanced Engineering and Science

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Abstract

Based on a C8051F006 SoC (system on-a-chip), a simple and low cost quasi-static capacitance-voltage (C-V) meter was designed and developed to obtain C-V characteristics of semiconductor devices. The developed C-V meter consists of a capacitance meter, a programmable voltage source, a C8051F006 SoC-based slave controller, and a personal computer (PC) as a master controller. The communication between the master and slave controllers is facilitated by the RS 232 serial communication. The accuracy of the C-V meter was guaranteed by the calibration functions, which are employed by the program in the PC and obtained through the calibration processes of analog to digital converter (ADC), digital to analog converters (DACs) of the C8051F006 SoC, and the programmable voltage source.  Examining 33-pF and 1000-pF capacitors as well three different p-n junction diodes, it was found that the capacitances of common capacitors are in the range of specified values and typical C-V curves of p-n junction diodes are achieved.
A Low Cost C8051F006 SoC-Based Quasi-Static C-V Meter for Characterizing Semiconductor Devices Rahmawati, Endah; Ekawita, Riska; Budiman, Maman; Abdullah, Mikrajuddin; Khairurrijal, Khairurrijal
TELKOMNIKA Telecommunication, Computing, Electronics and Control Vol 10, No 4: December 2012
Publisher : Universitas Ahmad Dahlan

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Abstract

Based on a C8051F006 SoC (system on-a-chip), a simple and low cost quasi-static capacitance-voltage (C-V) meter was designed and developed to obtain C-V characteristics of semiconductor devices. The developed C-V meter consists of a capacitance meter, a programmable voltage source, a C8051F006 SoC-based slave controller, and a personal computer (PC) as a master controller. The communication between the master and slave controllers is facilitated by the RS 232 serial communication. The accuracy of the C-V meter was guaranteed by the calibration functions, which are employed by the program in the PC and obtained through the calibration processes of analog to digital converter (ADC), digital to analog converters (DACs) of the C8051F006 SoC, and the programmable voltage source. Examining 33-pF and 1000-pF capacitors as well three different p-n junction diodes, it was found that the capacitances of common capacitors are in the range of specified values and typical C-V curves of p-n junction diodes are achieved.
Effect of Thickness and Temperature of SiO2 Layer on Leakage Currents in MOS Capacitor Materials with High Dielectric Constant by Involving the Charge Trap Noor, Fatimah A.; Masturi, Masturi; Abdullah, Mikrajuddin; Khairurrijal, Khairurrijal
Jurnal ILMU DASAR Vol 15, No 1 (2014)
Publisher : Fakultas MIPA Universitas Jember

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Abstract

Modeling of the leakage current in a field-effect transistor metal-oxide-semiconductor (MOSFET) with high dielectric material has been developed by taking into account the effect of charge traps formed at the interface of high-k material/SiO2. Transmittance calculated using Airy wave function approach and involving the anisotropic electron mass and the effect of coupling between transverse and longitudinal energy represented by the speed of the electrons in the metal gate. Transmittance obtained is then used to calculate the leakage current in the structure of n+Poly-Si/HfSiOxN/trap/SiO2/p-Si for oxide voltage variations, temperature, and thickness of the SiO2. From the calculation that the leakage current decreases with decreasing of oxide voltage and increasing of the thickness of the oxide layer of SiO2. Also obtained that the temperature of the device does not give a great influence on the change of leakage current. Keywords: Leakage current, electron speed, charge traps
Kajian Struktur Serat dan Porositas Masker Udara Rahmayanti, Handika Dany; Rahmawati, Rahmawati; Sustini, Euis; Abdullah, Mikrajuddin
Jurnal Fisika Vol 8, No 1 (2018)
Publisher : Jurnal Fisika

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Abstract

There are 6 brands of air masks on the market that are Evo med, Nexcare carbon, Nexcare daily, Indomaret, Borma and Evo club. All masks on the market have 3 layers. Based on the results of microscopy testing showed that the fiber diameter image of all mask brands in layer 2 is smaller than layer 1 and 3. Generally, all brands of masks show a uniform fiber size distribution. From the surface porosity measurements, Borma masks have a larger porosity than other masks in layers 1, 2 and 3 ie 60.64%, respectively; 42.95% and 63.58%. The results show that the difference in mask price in the market does not show the quality standards of different mask filters. Furthermore, the results of this study may contribute to the development of research on masks.
Aktivitas Fotokatalitik TiO2 yang Dilapiskan pada Polipropilena Berbentuk Lembaran dan Butiran Sutisna, Sutisna; Rokhmat, Mamat; Wibowo, Edy; Rahmayanti, Handika Dany; Khairurrijal, Khairurrijal; Abdullah, Mikrajuddin
Jurnal Matematika dan Sains Vol 22 No 1 (2017)
Publisher : Institut Teknologi Bandung

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Abstract

The sheet and granule of polypropylene (PP) have been used as the support material for TiO2 catalyst. The TiO2 powder was coated to the polymer surface using a combination of electrostatic and heating methods (for the PP sheet) and thermal milling method (for PP granule). The photocatalytic testing of catalysts conducted on a 300 ml solution of Methylene Blue (MB) with initial concentration of 25 ppm. Under solar ilumination, the catalyst sheets have a higher photocatalytic activity than the catalyst granules.
Pengaruh Perbandingan Molaritas Prekursor terhadap Fotoluminesensi BCNO yang Disintesis dengan Metode Hidrotermal Septia Mahen, Ea Cahya; Nuryadin, Bebeh Wahid Nuryadin Wahid; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal, Khairurrijal
Jurnal Matematika dan Sains Vol 18 No 3 (2013)
Publisher : Institut Teknologi Bandung

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Abstract

Abstrak Fosfor BCNO yang terdispersi pada likuid telah berhasil disintesis menggunakan metode hidrotermal. Bahan dasar (prekursor) yang digunakan adalah asam borat [B(OH)3] sebagai sumber boron, urea [(NH2)2CO] sebagai sumber nitrogen, dan asam sitrat (C6H8O7)sebagai sumber karbon. Dalam penelitian ini, telah dilakukan variasi rasio molar nitrogen terhadap boron (N/B) dan rasio molar karbon terhadap boron (C/B) dan pengaruhnya terhadap pendaran fosfor BCNO yang dihasilkan. Hasil karakterisasi spektrum fotoluminesen dari sampel yang dibuat menunjukkan bahwa pendaran fosfor BCNO mempunyai puncak emisi tunggal disekitar warna biru (~450 nm) ketika dieksitasi dengan sinar UV(365 nm). Intensitas pendaran dipengaruhi oleh kadar karbon terhadap kandungan boron (C/B) dan kadar nitrogen terhadap kandungan boron (N/B). Penambahan kadar karbon dan nitrogen diketahui dapat meningkatkan intensitas pendaran. Sedangkan intensitas optimum pendaran fosfor BCNO dicapai pada saat ratio molar C/B = 1 dan N/B =20. Kata kunci: Fosfor BCNO, Spektrum fotoluminesen, Metode hidrotermal. Influence of Precursor Molar Ratio on the BCNO Photoluminescence synthesized by Hydrothermal Method Abstract BCNO phosphor which is dispersed into liquid has been successfully synthesized by using hydrothermal method. The precursor consists of the borate acid [B(OH)3] as boron source, urea [(NH2)2CO] as nitrogen source, and citric acid (C6H8O7) as carbon source. In this research, molar ratio variations of nitrogen and carbon  towards boron (N/B and C/B), and their influence on resulted BCNO phosphor luminescence were done. The characterization results of the sample shows the single peak of BCNO phorphorous luminescence around blue color (~450 nm) on the photoluminescence spectrum, when excited by UV light (365nm). The photoluminescence intensity was affected by the ratio N/B and C/B. The increase of carbon and nitrogen ratio can increase the photoluminescence intensity. The optimum intensity of BCNO phosphor photoluminescence was obtained at the molar ratio N/B = 20 and C/B =1. Keywords : BCNO phosphor, Photoluminescence spectrum, Hydrothermal method.
DEPOSISI FILM TIPIS CERIA DIDADAH Nd MENGGUNAKAN TEKNIK PULSED-LASER ABLATION DEPOSITION (PLAD) Nurhasanah, lis; ., Khairurrijal; Abdullah, Mikrajuddin; Ariwahjoedi, Bambang; Budiman, Maman; ., Sukirno
Jurnal Sains dan Teknologi Nuklir Indonesia Vol 7, No 2 (2006): Agustus 2006
Publisher : BATAN

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Abstract

DEPOSISI FILM TIPIS CERIA DIDADAH Nd MENGGUNAKAN TEKNIK PULSED-LASER ABLATION DEPOSITION (PLAD). Film tipis ceria didadah Nd (Nd-doped ceria/NDC) telah berhasil dideposisikan di atas substrat Si(100) pada ~temperatur 400°C menggunakan teknik pulsed-laser ablation depostion (PI‑AD) dalam kondisi vakum dan tekanan 02 antara 15 - 29 mTorr. Analisis difraksi sinar-x, scanning electron microscopy (SEM), dan energy dispersive x-ray (EDX) digunakan untuk mengamati struktur, ketebalan dan komposisi kimia film. Hasil studi ini menunjukkan bahwa tekanan 02 selama proses deposisi menentukan kristalisasi, ketebalan film dan komposisi atom dalam film. Film tipis NDC dengan struktur kompak dan komposisi beragam yang diperoleh menunjukan bahwa teknik PLAD berpotensi untuk menghasilkan film tipis elektrolit yang penting bagi solid electrolyte fuel cell (SOFC).
PEMILIHAN JENIS BULIR POLIMER SEBAGAI PENYANGGA MATERIAL FOTOKATALIS TIO2 Aliah, Hasniah; Setiawan, Andhy; Masturi, -; Abdullah, Mikrajuddin
Jurnal Fisika Vol 4, No 1 (2014)
Publisher : Jurnal Fisika

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Abstract

Salah satu cara untuk meningkatkan aktivitas fotokatalitik suatu material katalis adalah dengan melapiskan material katalis Titanium dioksida (TiO2)  pada permukaan polimer yang berukuran cukup besar, ringan, transparan dan bersifat termoplastik.  Untuk memilih jenis polimer terbaik sebagai material penyangga katalis, dilakukan pengujian pelapisan partikel TiO2 pada tiga jenis polimer berbentuk bulir, yaitu polystyrene (PS), linear-low density polyethylene (LLDPE), dan polypropilene (PP).Pelapisan material TiO2 di permukaan polimer dilakukan dengan menggunakan teknik thermalmilling berbasis oven listrik. Temperatur dalam proses milling diatur di sekitar titik HDT (Heat Deflection Temperature)material polimer dan berlangsung selama 60 menit.  Massa jenis dan transmitansi polimer setelah dilapisi TiO2 merupakan parameter fisik yang menjadi acuan dalam pemilihan polimer penyangga katalis. Imobilisasi menggunakan teknik thermal milling menghasilkan polimer PP berlapis katalis TiO2 yang homogen. Pabrikasi dengan parameter milling 100°C dan 60 menit menghasilkan PP berlapis katalis TiO2 dengan massa jenis rata-rata 0,872 g/cm3 sehingga dapat mengapung di permukaan air.  Di samping itu, PP berlapis TiO2 mempunyai transmitansi 58%. Polimer PP inilah yang kemudian dipilih sebagai material penyangga katalis TiO2 dalam proses penelitian selanjutnya.